TP1, TP2, and TP3 are internal probe points on the chip. time is r, = 32ns and the overall gain is about 150mV/ fC. ... No reset is required and the dead time is of the order of 150ns. ... was realised in radiation 3The threshold is typically at 4 sigma above the rms noise level. hard \.2\xm CMOS technology by UTMC, California.
Title | : | Measurement of the cross section and T distribution in diffractive deep inelastic scattering at HERA |
Author | : | Emanuela Barberis |
Publisher | : | - 1996 |
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